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FEI Sirion 400 NC

High-resolution scanning electron microscope with field electron emission, which enables extremely high magnifications (up to a million times) and high resolution (1 nm).

It is equipped with an EDS (Energy Dispersive Spectroscopy) analyzer, Oxford Instruments.
It has a Schottky electron source, where a field emission produces a beam of electrons with a small diameter and a high density.
The result is high resolution, even at low voltages:

  • 1.0 nm at 15 kV
  • 2.0 nm at 1 kV

This is the main feature and the biggest advantage of this microscope.
Due to the good resolution at low voltage, in addition to conductive materials, non-conductive samples and materials with a small atomic number can be observed in high vacuum or low vacuum (up to 130 Pa).
The microscope is equipped with a detector for secondary (topographic contrast) and backscattered electrons (topographic and Z-contrast).
It is intended for the characterization of conductive and non-conductive samples.

Technical information

Schottky electron source that allows for a resolution of;

  • 1.0 nm at 15 kV;
  • 2.0 nm at 1 kV;
  • accelerating voltage from 200 V to 30 kV;
  • magnifications from 30 x to 1 000 000 x;
  • five motorized axes (x = 100 mm, y = 100 mm, z = 60 mm, tilt (-15 to 75 degrees) and rotation (n x 360 degrees));
  • the size of the chamber equipped with an infrared camera is 379 mm from left to right.

INCA 350 (EDX-analyzer)

The microscope is equipped for microchemical analysis with an energy dispersion spectrometer EDS Oxford INCA 350.

 

It enables qualitative and quantitative microchemical analysis in a single point and on the surface, as well as qualitative line analysis and surface distribution of elements (mapping analysis).

Elements from beryllium to uranium can be analyzed.

Basic technical characteristics:

  • the resolution of the EDS detector is 129 at Mn Kα